Process of thermal oxidation of an implanted semiconductor substrate

摘要

Production of a dielectric on a semiconductor substrate (2) comprises implanting ions into a surface layer of the substrate so that the ions form a first dielectric layer (7) and carrying out a thermal oxidation process to form a second dielectric layer (8) on the first dielectric layer. Preferably the substrate is a silicon substrate. The implanted ions are nitrogen ions. The substrate surface is cleaned before the dielectric is formed on its surface.