| 摘要 |
A lateral MOSFET exhibiting a high breakdown voltage includes a plurality of unit devices formed in a semiconductor substrate; each unit device including a trench, the side face thereof being extended at any angle from 30 degrees to 90 degrees with respect to the surface of trench; an offset drain region surrounding the side face and the bottom face of trench; an insulator filling trench; a gate electrode extended onto trench such that gate electrode works as a field plate; a source electrode extended above trench such that source electrode works as a field plate; and a drain electrode extended above trench such that drain electrode works as a field plate.
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