| 摘要 |
PURPOSE: An ALCVD(Atomic Layer Chemical Vapor Deposition) method is provided to shorten one cycle processing time without using a purge processing. CONSTITUTION: In the ALCVD method, ON/OFF pulse injection time of source gas and reactive gas is controlled to 0.01-10 seconds under the pressure of 10E1-10E8 Torr. Also, the vapor pressure of source gas is controlled to 0.001-1 Torr. Preferably, the temperature of a substrate is controlled to 50-550 °C. Thereby, one cycle processing time is effectively shorten without using a purge processing.
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