COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE DEVICE

摘要

PURPOSE: A complementary metal oxide semiconductor(CMOS) image device is provided to normally perform a reset function even when exposure alignment for forming an ion implantation mask goes wrong, by eliminating the possibility that a low density doping region between a high density doping region and a channel region of a reset transistor functions as a barrier in exhausting optical charges when the reset transistor is open. CONSTITUTION: The CMOS image device has at least one pixel in a region where an image is detected. A semiconductor substrate layer is doped with impurities of the first conductivity type. A photodiode region is formed in the surface of the semiconductor substrate layer in a partial region of the pixel, doped with relatively low density impurities of the second conductivity type. The photodiode region includes a fixing region with a potential pinning layer(120) doped with the first conductivity type and an open region except the fixing region. A MOS-type reset transistor has a relatively high density source region doped with the second conductivity type so that a part of the source region overlaps the photodiode region in the open region.