| 摘要 |
PURPOSE: To provide a mask pattern design method for easily and rapidly designing a mask pattern free from a dimensional error caused by a difference of a resist film thickness due to the level difference part of a base layer. CONSTITUTION: The mask pattern design method of applying the resist film on an inter-layer insulation film with a wiring groove formed, and forming a via-hole forming resist pattern on the resist film formed on the wiring groove by using the mask pattern, comprises a process of setting a corrected groove wiring data layer C in a prescribed dimension position inward from the side edge of a grove wiring data layer A for forming the wiring groove, a process of defining a product aggregation data layer E by taking the product of the original via data layer B and the auxiliary aggregation data layer D of the corrected groove wiring data layer C, a process of defining an enlarged data layer F by increasing the planar dimension of the auxiliary aggregation data layer E by a prescribed quantity, and a process of forming an area where the original via data layer B and the enlarged data layer F overlaid each other as the final corrected via data layer G. |
