| 摘要 |
An electrical device such as a diode usable in high voltage applications wherein the electrical device is fabricated from a method which yields a plurality of high voltage electrical devices, the present method including providing a substrate of a semiconductor material having a predetermined substrate conductive type, the substrate being typically formed from a monocrystalline growth method, forming a second epitaxial layer contiguous with the upper surface of the substrate, the epitaxial layer having a predetermined second layer conductive type, and thereafter forming a top layer of dopant material in a predetermined pattern upon the upper surface of the second epitaxial layer. This predetermined pattern of dopant material typically takes the form of an array of patches which can be achieved through either a masking and etching process, or through a screen printing process. Once the predetermined pattern of dopant material is formed or otherwise deposited upon the upper surface of the epitaxial layer, the substrate, epitaxial and top layers are heated to form a diffusion region in the epitaxial layer, this diffusion region having a specific correlation to the predetermined pattern of dopant material. Once heated, the remaining top layer of dopant material is removed and the resultant substrate and diffused epitaxial layer is divided so as to form a plurality of separate electrical devices. Each patch of dopant material corresponds to the middle portion of an individual electrical device devisable from the resultant substrate and defused based and the diffusion region achieved by the heating process will be deepest substantially towards the middle portion of each respective electrical device and will be comparatively shallower at the edges of each such electrical device.
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