| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reliable semiconductor device capable of suppressing, at a low cost, the occurrence of a leakage current caused by light. SOLUTION: On a main surface side of a p-type silicon substrate 1 of a base board, an n-type drain region 2 and an n-type source region 3 are formed away from each other. Related to the p-type silicon substrate 1, a gate electrode 5 is formed via a gate oxide film 4 above a part between the n-type drain region 2 and the n-type source region 3. On the main surface side of the p-type silicon substrate 1, a protecting film 10 is so formed as to cover an insulating film 9, a drain electrode 7, a source electrode 8, a drain wiring 7a, a source wiring 8a, and so on. The surface of the protecting film 10 is roughened to form a number of minute recesses and protrusions for adding light-shielding function.</p> |
