发明名称 |
Novel umos-like gate-controlled thyristor structure for ESD protection |
摘要 |
Described is a MOS gate-controlled SCR (UGSCR) structure with a U-shaped gate (UMOS) for an ESD protection circuit in an IC device which is compatible with shallow trench isolation (STI) and self-aligned silicide (salicide) fabrication technology. The UMOS gate is located in a p-substrate and is surrounded by an n-well on either side. Adjacent to one side of the UMOS gate, a first n+ diffusion is formed which straddles the first n-well. The n+ diffusion together with a p+ pickup diffused next to it form the cathode of the SCR (thyristor). Adjacent to the other side of the UMOS gate, a second n+ and p+ diffusion are formed in a second n-well. The second n+ and p+ diffusion together with the UMOS gate form the anode of the SCR and the input terminal of the circuit to be protected. The SCR is formed by the first n+ diffusion/n-well (cathode), the p-substrate, the second n-well and the second p+/n+ diffusion (anode). A latchup immune circuit is achieved by creating a U-shaped gate structure which is lined with a thick gate oxide--similar to a field oxide--under the poly gate.
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申请公布号 |
US2002195665(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020233764 |
申请日期 |
2002.09.03 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
JUN SONG;HUA GUANG-PING;LO KENG-FOO |
分类号 |
H01L21/332;H01L23/62;H01L27/02;H01L29/74;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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