发明名称 |
Integrated circuit device having cyanate ester buffer coat and method of fabricating same |
摘要 |
An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.
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申请公布号 |
US2002195687(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20020196458 |
申请日期 |
2002.07.16 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BROOKS J. MIKE;KING JERROLD L.;SCHOFIELD KEVIN |
分类号 |
H01L21/56;H01L23/29;(IPC1-7):H01L21/31;H01L21/312 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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