发明名称 Integrated circuit device having cyanate ester buffer coat and method of fabricating same
摘要 An integrated circuit including a fabricated die having a cyanate ester buffer coating material thereon. The cyanate ester buffer coating material includes one or more openings for access to the die. A package device may be connected to the die bond pads through such openings. Further, an integrated circuit device is provided that includes a fabricated wafer including a plurality of integrated circuits fabricated thereon. The fabricated wafer has an upper surface with a cyanate ester buffer coating material cured on the upper surface of the fabricated integrated circuit device. Further, a method of producing an integrated circuit device includes providing a fabricated wafer including a plurality of integrated circuits and applying a cyanate ester coating material on a surface of the fabricated wafer. The application of cyanate ester coating material may include spinning the cyanate ester coating material on the surface of the fabricated wafer to form a buffer coat.
申请公布号 US2002195687(A1) 申请公布日期 2002.12.26
申请号 US20020196458 申请日期 2002.07.16
申请人 MICRON TECHNOLOGY, INC. 发明人 BROOKS J. MIKE;KING JERROLD L.;SCHOFIELD KEVIN
分类号 H01L21/56;H01L23/29;(IPC1-7):H01L21/31;H01L21/312 主分类号 H01L21/56
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