发明名称 |
Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures |
摘要 |
An embodiment of the present invention is a method of forming an ultra-thin dielectric layer, the method comprising the steps of: providing a substrate having a semiconductor surface; forming an oxygen-containing layer on the semiconductor surface; exposing the oxygen-containing layer to a nitrogen-containing plasma to create a uniform nitrogen distribution throughout the oxygen-containing layer; and re-oxidizing and annealing the layer to stabilize the nitrogen distribution, heal plasma-induced damage, and reduce interfacial defect density. This annealing step is selected from a group of four re-oxidizing techniques: Consecutive annealing in a mixture of H2 and N2 (preferably less than 20% H2), and then a mixture of O2 and N2 (preferably less than 20% O2); annealing by a spike-like temperature rise (preferably less than 1 s at 1000 to 1150° C.) in nitrogen-comprising atmosphere (preferably N2/O2 or N2O/H2); annealing by rapid thermal heating in ammonia of reduced pressure (preferably at 600 to 1000° C. for 5 to 60 s); annealing in an oxidizer/hydrogen mixture (preferably N2O with 1% H2) for 5 to 60 s at 800 to 1050° C.
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申请公布号 |
US2002197886(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010885744 |
申请日期 |
2001.06.20 |
申请人 |
NIIMI HIROAKI;KHAMANKAR RAJESH;CHAMBERS JAMES J.;HATTANGADY SUNIL;ROTONDARO ANTONIO L.P. |
发明人 |
NIIMI HIROAKI;KHAMANKAR RAJESH;CHAMBERS JAMES J.;HATTANGADY SUNIL;ROTONDARO ANTONIO L.P. |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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