发明名称 |
Method for fabricating a CMOS image sensor |
摘要 |
A fabrication method for a CMOS image sensory device is described. An isolation layer is formed in the substrate to isolate a photodiode sensory region and a transistor device region. A gate structure is further formed on the transistor device region, followed by forming concurrently a source/drain region in the transistor device region beside the side of the gate structure and a doped region in the photodiode sensory region. Thereafter, a self-aligned block is formed on the photodiode sensory region, followed by forming a protective layer on the substrate.
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申请公布号 |
US2002197758(A1) |
申请公布日期 |
2002.12.26 |
申请号 |
US20010893140 |
申请日期 |
2001.06.26 |
申请人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
发明人 |
CHEN CHONG-YAO;LIN CHEN-BIN;LIU FENG-MING |
分类号 |
H01L21/00;H01L21/336;H01L21/82;H01L21/8238;H01L27/14;H01L27/146;H01L29/76;H01L29/768;H01L31/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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