发明名称 |
Semiconductor memory device having a memory block with a decreased capacitance |
摘要 |
A semiconductor memory device includes a plurality of memory cell arrays. Each of the memory cell arrys includes a plurality of memory blocks. A row decoder is located adjacent to the memory cell array. Capacitance of the memory block becomes smaller as the memory block location becomes farther from the row decoder.
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申请公布号 |
US6498763(B2) |
申请公布日期 |
2002.12.24 |
申请号 |
US20010835812 |
申请日期 |
2001.04.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG HWA |
分类号 |
G11C5/02;(IPC1-7):G11C8/00 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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