发明名称 Semiconductor memory device having a memory block with a decreased capacitance
摘要 A semiconductor memory device includes a plurality of memory cell arrays. Each of the memory cell arrys includes a plurality of memory blocks. A row decoder is located adjacent to the memory cell array. Capacitance of the memory block becomes smaller as the memory block location becomes farther from the row decoder.
申请公布号 US6498763(B2) 申请公布日期 2002.12.24
申请号 US20010835812 申请日期 2001.04.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JUNG HWA
分类号 G11C5/02;(IPC1-7):G11C8/00 主分类号 G11C5/02
代理机构 代理人
主权项
地址