发明名称 |
FET gate oxide layer with graded nitrogen concentration |
摘要 |
A semiconductor device includes a semiconductor substrate; a gate oxide film made on the semiconductor substrate; and first transistors each having a first gate formed on the gate oxide film and a pair of source/drain formed in confrontation in the semiconductor substrate. The gate oxide film has a higher nitrogen concentration in its portion nearer to the first gates than that of its portion nearer to the semiconductor substrate.
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申请公布号 |
US6498365(B1) |
申请公布日期 |
2002.12.24 |
申请号 |
US20000667793 |
申请日期 |
2000.09.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WAKAMIYA MIKIO |
分类号 |
H01L21/8247;H01L21/28;H01L21/3115;H01L21/314;H01L21/318;H01L27/115;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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