发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY AND ITS TEST METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which tests of peripheral circuits of a memory and wiring can be performed without performing write-in for a memory cell. SOLUTION: In the non-volatile semiconductor memory, control gates of a memory cell arranged in the same row in a memory cell array are connected in common first word lines connected to a row decoder and drains of a memory cell arranged in the same column in the memory cell array are connected in common, and first bit lines connected to a column selection gate is included, the non-volatile semiconductor memory is provided with a first switch arranged between the memory cell array and a first ROM and a second switch arranged between the memory cell array and a second ROM, and in testing, the first and the second switches are controlled so that data can be read out from the first ROM and the second ROM.</p>
申请公布号 JP2002367399(A) 申请公布日期 2002.12.20
申请号 JP20010174587 申请日期 2001.06.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI TOSHIKI
分类号 G01R31/28;G11C16/02;G11C17/00;G11C29/00;G11C29/12;(IPC1-7):G11C29/00 主分类号 G01R31/28
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