| 摘要 |
PROBLEM TO BE SOLVED: To realize a III nitride compound semiconductor light-emitting device, in which the distribution ratio of carriers for well layers can be controlled, and the light emitting device can be improved in luminous efficiency and durability. SOLUTION: When this multi-quantum barrier layer is introduced, carriers are effectively restrained from overflowing and the compound semiconductor light-emitting device can be improved in luminous efficacy and durability, even if p/n-type semiconductor layers on both sides are reduced in film thickness and aluminum(Al) compositional ratio. When two or more well layers which are arbitrarily or properly different form each other in emission wavelength are separated from each other by the use of multi-quantum barriers, the destinations of carriers are determined based on the probability, in accordance with the action principle of quantum theory. The destinations of holes are determined the same as the carriers. Therefore, if a proper multi-quantum barrier layer, which indicates a proper reflectivity corresponding to the expected momentum of carriers, is introduced, 'realization of the required distribution ratio of carriers (emitted peak ratio) for well layers' is realized easily in a semiconductor light-emitting device equipped with well layers different from each other in emission wavelength (therefore, having a plurality of emission peaks), and a device structure superior in luminous efficiency and durability can be realized. |
