发明名称 LEAD-TYPE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To improve the yield and reliability of a lead-type semiconductor element and at the same time, to reduce the cost of the element by avoiding the occurrence of cracks in a chip by increasing the thicknesses of solder layers immediately below leads, and by reducing the thickness of solder a the terminating end sections of the chip, and so on. SOLUTION: The lead-type semiconductor element is provided with the chip 15, in which diffusion layers 12a and 12b and electrodes 14 connected to the layers 12a and 12b, are formed on the main surface of a substrate and leads 18 which are soldered to the main surfaces of the chip 15 and have truncated cone-shaped front ends. The front end angles of the leads 18 between tapered surfaces S of the leads 18 and the main surface of the substrate are adjusted to 10-18 deg..</p>
申请公布号 JP2002368171(A) 申请公布日期 2002.12.20
申请号 JP20010169811 申请日期 2001.06.05
申请人 TOSHIBA COMPONENTS CO LTD 发明人 MATSUMOTO SHINICHI;KOIZUMI YASUHIRO;INOUE YOSHIAKI;MORIOKA NORIYUKI
分类号 H01L23/48;(IPC1-7):H01L23/48 主分类号 H01L23/48
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