| 摘要 |
PROBLEM TO BE SOLVED: To reduce mechanical stresses applied to a semiconductor device, which has a flank structure including a silicon nitride film and is of <=0.14μm in gate length. SOLUTION: This semiconductor device has on a silicon substrate 1 a gate electrode 5, which is formed while insulated from the substrate 1 and of <=0.14μm in gate length and a sidewall 15, including a laminated structure of a silicon oxide film 9 which, is formed from the substrate 1 to the sidewall of the gate electrode 5, a silicon nitride film 11 which is formed on the silicon oxide film 9, and a silicon oxide film 13 which is formed on the silicon nitride film 11. Here, the ratio 'TSi O2 /TSi N' of the film thickness TSi O2 of the silicon oxide film 9 and the film thickness TSi N of the silicon nitride film is set >=0.5.
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