| 摘要 |
A fabrication process for a thin film transistor including, in the first process step, performing semiconductor layer formation processing, crystallization processing, and first gate insulator formation processing without exposing the substrate to atmosphere. In the second process step, performing rapid thermal processing of the first gate insulator layer and the semiconductor layer. In the third process step, performing patterning of the first gate insulator layer and the semiconductor layer. In the fourth process step, performing cleaning by etching the surface of the first gate insulator layer which has been contaminated by the resist mask. In the fifth process step, performing hydrogenation processing followed by formation of the second gate insulator layer on the surface of the first gate insulator layer.
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