发明名称 Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
摘要 A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
申请公布号 US2002192978(A1) 申请公布日期 2002.12.19
申请号 US20020212892 申请日期 2002.08.05
申请人 GEALY F. DANIEL;DEBOER SCOTT;CHAPEK DAVE;AL-SHAREEF HUSAM N.;THAKUR RANDHIR 发明人 GEALY F. DANIEL;DEBOER SCOTT;CHAPEK DAVE;AL-SHAREEF HUSAM N.;THAKUR RANDHIR
分类号 C30B33/00;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 主分类号 C30B33/00
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