发明名称 Preparation of CIGS-based solar cells using a buffered electrodeposition bath
摘要 A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.
申请公布号 US2002189665(A1) 申请公布日期 2002.12.19
申请号 US20010829730 申请日期 2001.04.10
申请人 DAVIS, JOSEPH & NEGLEY 发明人 BHATTACHARYA RAGHU NATH
分类号 C25D5/00;H01L21/00;H01L31/00;H01L31/032;H01L31/0336;(IPC1-7):H01L21/00 主分类号 C25D5/00
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