| 摘要 |
PURPOSE: A method for manufacturing a capacitor of FeRAM(Ferroelectric Random Access Memory) is provided to prevent a plasma damage of a ferroelectric film and a short between a lower and upper electrodes by using a spacer. CONSTITUTION: A first conductive layer, a ferroelectric film and a second conductive layer are sequentially formed on a semiconductor substrate(200) having a transistor. An upper electrode pattern(235a) and a ferroelectric pattern(230a) are formed by selectively etching the second conductive layer and the ferroelectric film. An insulating spacer(240a) is formed at both sidewalls of the upper electrode pattern(235a) and the ferroelectric pattern(230a). A lower electrode pattern(225a) is formed by selectively etching the first conductive layer.
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