| 摘要 |
PROBLEM TO BE SOLVED: To obtain both a new polymer useful for preparing a resist suitable for fine processing by using various kinds of radiations, for example, KrF excimer laser or ArF excimer laser, X-rays such as synchrotron radiation, and a charged particle beam such as e-beam, and a resist composition containing the polymer. SOLUTION: The polymer for a chemically amplified resist is represented by chemical formula 1 (R1 is a 1-30C alkyl group; R2 is hydrogen atom or a 1-30C alkyl group; R3 and R4 are mutually independent and are each hydrogen atom or methyl group; X is a vinyl ether derivative, an olefin derivative or a styrene derivative; (l), (m) and (n) are each a repeating unit of the polymer, (l) is 0.05-0.9, (m) is 0-0.7 and (n) is 0-0.7). |
