发明名称 MASK MANUFACTURING SYSTEM, MASK MANUFACTURING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To rapidly manufacture a high-accuracy mask and semiconductor device at a low cost by making a blank with an optimum film stress. SOLUTION: This system has equivalent pattern calculating means which determines the optimum film stress by previously evaluating the deformation state of the mask by the stress of the film using an equivalent pattern in accordance with mask drawing data, blank making means which makes the blank by forming the film having the optimum film stress obtained in the equivalent pattern calculating means, drawing means which draws an original drawing pattern on the blank while correcting a drawing error in accordance with the predicted result of the deformation state of the bank predicted in the equivalent pattern calculating means, etching means which forms the patterns on the mask by performing etching using the original drawing patterns drawn into drawing means and pattern measuring and inspecting means which inspects the mispositioning after the pattern formation by the etching means.</p>
申请公布号 JP2002365785(A) 申请公布日期 2002.12.18
申请号 JP20010172520 申请日期 2001.06.07
申请人 MITSUBISHI ELECTRIC CORP;OKI ELECTRIC IND CO LTD;HITACHI LTD;FUJITSU LTD;SHIMADA PHYS & CHEM IND CO LTD 发明人 CHIBA AKIRA;TAKAHASHI MASASHI;ITO MASAAKI;HOSHINO EIICHI;YONEDA HISAFUMI
分类号 G03F1/54;G03F1/84;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/54
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