SILICON WAFER WITH CONTROLLED DISTRIBUTION OF DEFECTS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicon wafer with controlled distribution of defects is provided to sufficiently guarantee a denuded zone near the surface of the wafer while oxygen precipitates is distributed to have a sufficient gathering effect in a bulk region of the wafer, and to decrease the size of a void inside an ingot by rapidly cooling the ingot. CONSTITUTION: The density profile of the oxygen precipitates from the front surface to the rear surface of the silicon wafer having an active region of a semiconductor device shows the first and second peak in predetermined depths from the front and rear surface. A denuded zone is formed between the front and rear surface and the first and second peak. The density profile of the oxygen precipitates is concave in the bulk region between the first peak and the second peak.