| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor relay which can be improved in high-frequency characteristic and reduced in size and, at the same time, rationalized in manufacturing process. SOLUTION: In the semiconductor relay, two MOSFETs 6 are mounted on a BGA substrate 5, electrically connected to a substrate 1 mounted with an LED 2 and a photovoltaic element 3 through metallic projections 7, and connected to a mother substrate by BGA mounting. In addition, the need of metallic wires for connecting the MOSFETs 6 to each other is eliminated and the wiring for the MOSFETs 6 can be constituted thickly and shortly by electrically connecting the MOSFETs 6 to the outside through filled-up through holes 8 formed through the BGA substrate 5 immediately below the mounting sections of the MOSFETs 6 and electrodes 9 and solder balls 10 provided on the rear surface of the BGA substrate 1. Consequently, the influence of L-components in wiring routes and the deterioration of signals can be reduced. In addition, since no lead frame is used, impedance unmatching can be reduced significantly.</p> |
