MANUFACTURING METHOD OF SILICON CARBIDE

摘要

PROBLEM TO BE SOLVED: To provide a method for stably manufacturing a high quality bulk single crystal of SiC that has a reduced amount of polymorhs and crystal defects at a practical speed. SOLUTION: In a method in which a SiC single crystal is grown on the substrate surface by contacting the SiC single crystal substrate with a melt containing a Si-containing raw material, a gas containing hydrocarbons is supplied to the melt under an atmospheric or elevated pressure, and the temperature of the contact area of the substrate and the melt is kept lower than that of the melt.