发明名称 HUGE MAGNETORESISTIVE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a GMR element capable of fully stabilizing a GMR laminated film magnetically, reading information with more sensitivity, and suppressing electro-migration. SOLUTION: A CPP type GMR element 1A comprises a GMR laminated film comprising a ferroelectric film, a non-magnetic film, and an antiferromagnetic film. Related to the GMR element, a sensing current Is flows in the direction vertical to the film surface of a GMR laminated film 2 thanks to an upper-part electrode 14 and a lower-part electrode 12. A hard magnetic film 3 is jointed directly, to both outsides in widthwise direction of the GMR laminated film 2. An insulation layer 4 is formed above or below the hard magnetic film 3. An opening between the insulation layers 4 on both sides regulates the path of the sensing current Is, between the upper-part electrode 14 or lower-part electrode 12 and the GMR laminated film 2. A high resistance film 31 is inserted in the hard magnetic film 3, which suppresses or prevents shunting of the sensing current Is into the hard magnetic film 3.
申请公布号 JP2002359414(A) 申请公布日期 2002.12.13
申请号 JP20010165763 申请日期 2001.05.31
申请人 SONY CORP 发明人 ONO HIROAKI;MATSUZONO JUNJI;TERADA SHOJI;OGAWARA SHIGEHISA
分类号 G01R33/09;G11B5/39;H01F10/14;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/09
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