| 摘要 |
PURPOSE: A laser diode and a manufacturing method thereof are provided to increase the output of laser by preventing a dispersion phenomenon of a current injected into a semiconductor active layer. CONSTITUTION: A first current restricting layer(15) is located on a substrate(10) to restrict a conductive path of a current. A first clad layer(20) is formed on an upper surface of the first current restricting layer(15). An active layer(40) is formed on an upper portion of the first clad layer(20) to oscillate a laser. A second clad layer(60) is formed on an upper surface of the active layer(40) to increase carrier density of the active layer(40) together with the first clad layer(20). A second current restricting layer(65) is adjacent to the second clad layer(60) to restrict a conductive path of a current. Electrode layers(80,90) are respectively provided on outsides of the second current restricting layer(65) and the substrate(10). A first conductive channel(110) having a predetermined width is formed on the first current restricting layer(15). A second conductive channel(100), which corresponds to the first short channel(110) of the first current restricting layer(15), is formed on the second current restricting layer(65).
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