SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to improve storage capacitance without increasing a height of a capacitor and to prevent a bridge between storage nodes. CONSTITUTION: A plurality of word line patterns(108) are formed on a desired portion of a semiconductor substrate(100). A contact plug is filled between adjacent word line patterns(108). A plurality of bit line patterns(118) are contacted with selected contact plugs. An interlayer dielectric is isolated between contact plugs and between non-selected contact plug and the bit line patterns(118). A plurality of storage node contact plugs(124) are connected with the bit line contact plugs and the non-collected contact plugs. A storage node electrode(126) is formed on the storage node contact plugs. A dielectric film is deposited on the surface of the storage node contact plug(124) and the surface of the storage node electrode(126). A plate electrode is formed on the dielectric film.