| 摘要 |
PURPOSE: A self-aligned flash memory device and a manufacturing method thereof are provided to improve a coupling ratio and to prevent an over-etching of ONO dielectric film by forming a floating gate line using a self-alignment. CONSTITUTION: By sequentially forming and patterning a gate oxide layer(11) as a tunneling oxide layer, the first polysilicon layer(13) and an etch stopper on a substrate(10), a trench and a floating gate line are formed in and on the substrate(10), respectively. A trench isolation layer is formed by filling a silicon oxide into the trench. A recessed isolation layer(211) is formed by recess-etching the surface of the trench isolation layer. A polysilicon spacer(33) is formed at both sidewalls of the floating gate pattern. By selectively etching the etch stopper, the spacer(33) is protruded in the shape of horn. ONO dielectric film(35) is then formed on the resultant structure.
|
