发明名称 Adjustable electrostatic discharge protection clamp
摘要 In an ESD protection circuit for an analog bipolar circuit, the avalanche breakdown voltage of a reverse-coupled NPN BJT acting as an avalanche diode is adjusted to comply with breakdown voltage and latchup requirements by including a resistor between the base and collector of the BJT.
申请公布号 US6492859(B2) 申请公布日期 2002.12.10
申请号 US20010769084 申请日期 2001.01.24
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 VASHCHENKO VLADISLAV;HOPPER PETER J.
分类号 H01L27/02;(IPC1-7):H03K5/08;H03L5/00 主分类号 H01L27/02
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