| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high performance semiconductor device in which variation of characteristics is suppressed and a method for fabricating the semiconductor device by a convenient high yield fabrication process. SOLUTION: In the semiconductor device employing a silicon film having crystallinity formed on a glass substrate as an active region, the active region 109 comprises a group of grains arranged linearly substantially in one direction (a region delimited by grain boundary GB) wherein the shift of face orientation between the linear group of grains and an adjacent linear group of grains is set within 10 deg..</p> |
