FIELD EMISSION ELECTRON SOURCE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field emission electron source capable of increasing an emission current and electron emission efficiency and facilitating improvement of its breakdown voltage, extension of its service life and increase of its area. SOLUTION: A high-field drift part 6 is formed on the main surface side of an n-type silicon substrate 1 and a front electrode 7 is formed on the drift part 6. The silicon substrate 1 constitutes a lower electrode. In the drift part 6, conductive films 6b formed of a Si film and insulating films 6a formed of a SiO2 film are alternately stacked. Each film thickness of the respective conductive films 6b and the respective insulating films 6a is set equal to or less than the average free travel of electrons. That is, each thickness of the respective conductive films 6b and the respective insulating films 6a is set at a value capable of forming the trajectory of the electron.