| 摘要 |
PROBLEM TO BE SOLVED: To provide an HBT(Hetero Junction Bipolar Transistor) of which the operational characteristics are improved by reducing the resistance of a base lead-out region, and its manufacturing method. SOLUTION: An opening 7A comprises an n<-> -type silicon layer 8 and an n<+> -type silicon layer 8a arranged so as to bulge out from an opening 6A until reaching the sidewall of a nitride film 7. Moreover, the opening 7A comprises, on the n<-> -type silicon layer 8 and the n<+> -type silicon layer 8a, a p<+> -type poly crystal silicon germanium film 9B led out in the lateral direction on the surface of a nitride film 7, and a poly crystal silicon film 10B on the surface of this silicon germanium film 9B.
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