| 摘要 |
PROBLEM TO BE SOLVED: To form wiring in a stable manner and prevent a rise in wiring resistance while reducing the width of wiring dimension and memory cell area in a semiconductor device mounted with DRAM memory cells. SOLUTION: In a semiconductor device mounted with DRAM memory cells, at least the width of a bit line wiring is reduced by both an insulating material with a groove or a space of resist dimension that sets wiring width and a side wall which is formed along the inside of the groove or space, so even if the wiring is formed in such a dimension as to allow forming of wiring in a processing facility in a stable manner, the wiring width is reduced. Therefore, it is possible to enhance yields and quality without incurring a performance penalty. |
