| 摘要 |
PURPOSE: A method for forming a copper interconnection of semiconductor devices is provided to improve a reliability of the copper interconnection by implanting tin atoms into a copper film and performing an annealing process. CONSTITUTION: A lower metal line(22) is formed on a semiconductor substrate(21). After forming an interlayer dielectric(24) on the resultant structure, a contact hole is formed by selectively etching the interlayer dielectric using dual damascene processes. A barrier metal layer(26) is formed on the entire surface of the resultant structure. A pure copper film is filled into the contact hole by depositing copper. A copper alloy film(28) is formed by implanting tin atoms into the copper film. The copper alloy film(28) is then annealed. A copper interconnection is formed by planarizing the copper alloy film(28). A capping layer is formed on the resultant structure.
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