RINSING METHOD AND RINSING DEVICE FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for removing Pt(Pt-Ir) and BST contamination on the surface edge, back surface and end face of a semiconductor wafer. SOLUTION: A wafer 1 for which a laminated film selected from a group composed of a Pt film, a Pt-Ir film and a Ba-Sr-Ti film is formed on the surface is prepared. A liquid chemical containing hydrochloric acid is brought into contact only with the surface edge, back surface and end face of the wafer 1. Then, it is rinsed with pure water. Further, the liquid chemical containing hydrogen fluoride is brought into contact and it is rinsed again with the pure water.