Process for forming a low ohmic contact between a metallic layer and a semiconductor material,申请号EP19950114958-传众专利搜索

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发明名称	Process for forming a low ohmic contact between a metallic layer and a semiconductor material
摘要
申请公布号	EP0704894(B1)	申请公布日期	2002.12.04
申请号	EP19950114958	申请日期	1995.09.22
申请人	INFINEON TECHNOLOGIES AG	发明人	WERNER, WOLFGANG, DR.;WIESINGER, KLAUS, DR.;PREUSSGER, ANDREAS, DR.
分类号	H01L21/28;H01L21/285;(IPC1-7):H01L21/768	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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