发明名称 |
Method of manufacturing a semiconductor component |
摘要 |
A method of manufacturing a semiconductor component includes providing a composite substrate (300) with a dielectric portion and a semiconductor portion and growing an epitaxial layer (400) over the composite substrate. The epitaxial layer has a polycrystalline portion (402) over the dielectric portion of the composite substrate and also has a monocrystalline portion (401) over the semiconductor portion of the composite substrate. A first dopant is diffused into the monocrystalline portion of the epitaxial layer to form an emitter region in the monocrystalline portion of the epitaxial layer while a second dopant is simultaneously diffused into the monocrystalline portion of the epitaxial layer to form an enhanced portion of the base region.
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申请公布号 |
US6489211(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20000516349 |
申请日期 |
2000.03.01 |
申请人 |
MOTOROLA, INC. |
发明人 |
FREEMAN, JR. JOHN L.;BALDA RAYMOND J.;PRYOR ROBERT A.;PAULSEN JAMES D.;JOHNSEN ROBERT J. |
分类号 |
H01L21/331;H01L29/06;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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