发明名称 |
Method for growing low-defect single crystal heteroepitaxial films |
摘要 |
A method is disclosed for growing high-quality low-defect crystal films heteroepitaxially on substrates that are different than the crystal films. The growth of the first two heteroepitaxial bilayers is performed on a first two-dimensional nucleate island before a second growth of two-dimensional nucleation is allowed to start. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, or 2H-GaN on 6H-SiC, 4H-SiC, or silicon substrates.
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申请公布号 |
US6488771(B1) |
申请公布日期 |
2002.12.03 |
申请号 |
US20010965250 |
申请日期 |
2001.09.25 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
POWELL J. ANTHONY;NEUDECK PHILIP G. |
分类号 |
C30B25/02;C30B25/18;(IPC1-7):C30B25/04 |
主分类号 |
C30B25/02 |
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