| 摘要 |
Method of fabricating a semiconductor device, comprising the steps of forming: an insulating interlayer 33, provided with a hole 35, on a semiconductor substrate 31; a metal layer 41 on the semiconductor intermediate, heat-treating the metal layer 41 to fill the hole 35 with the metal, forming a second metal layer 43 on the first metal layer 41, and heat-treating the second layer 43 to planarize it. As an alternative, the semiconductor device comprises a semiconductor wafer (semiconductor slice). For the metal layer, pure Al or an aluminium alloy without Si component is used. In the semiconductor device, a contact hole is entirely filled with the metal. No Si deposit is formed on the surface after a wiring pattern has been applied, and no Al spiking occurs. <IMAGE> |
