| 摘要 |
PROBLEM TO BE SOLVED: To provide a motor drive circuit wherein malfunctions of a semiconductor switch element are prevented and thus breake of the circuit due to the malfunctions is prevented. SOLUTION: The motor drive circuit 1B is provided between the gates of FETs M1 and M3 and ground G with transistors Q12 and Q32 which are turned on in conjunction with application of on-voltage to FEMs M2 and M4 by transistors Q2 and Q4, respectively, and draw the respective gate charges of the FETs M1 and M3 to ground G. The motor drive circuit 1B is also provided between the gates and sources of the FETs M1 and M3 with a pair of Zener diodes D3, D4, D6, and D7 which are connected in series in opposite directions to each other for preventing application of overvoltage exceeding the breakdown voltage in the direction of on-voltage and the breakdown voltage in the direction opposite to the direction of on-voltage of the FETs M1 and M3.
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