| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of amplifying a luminescent bandwidth of a semiconductor photoelectric element for manufacturing a multiplex quantum well structure, by which preferred temperature characteristics and modulation characteristics can be obtained, when applied to a semiconductor photoelectric element, and the width to be modulated and an amplitude gain can be widened significantly more than those of the semiconductor laser elements of the same kind, when being applied to a semiconductor laser whose wavelength is adjustable. SOLUTION: Quantum well structures, having different widths for controlling the distribution of two-dimensional carriers by electronic holes or electrons, are formed by utilizing the lengths of different photo-isolation confinement structures, and the structures are stuck to form into a multiple structure. Furthermore, the width of wavelength is adjusted, by adjusting the composition of materials of the bottom and barrier layers of the different multiple quantum wells or the width of the quantum well or the length of the photo-isolation confinement structures. |
