| 摘要 |
Disclosed is a method for removing Pt (or Pt-Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt-Ir film, and a Ba-Sr-Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.
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