发明名称 Substrate for forming a resist pattern, process for producing the substrate and process for forming a resist pattern of the chemical amplification type
摘要 A substrate for forming a resist pattern comprising a resist film of the chemical amplification type and a coating film which is formed on the resist film, comprises an amorphous polyolefin or a polymer having an aromatic ring and has the same thickness as that of the resist film or smaller; and a process for forming a resist pattern of the chemical amplification type, which comprises steps of forming a pattern of a latent image in the resist film by irradiation with an ionizing radiation and converting the pattern of a latent image into a pattern of a visible image by a development treatment. Deterioration in sensitivity and resolution with time during storage and transportation of the resist film of the chemical amplification type formed on the substrate is suppressed, the sectional shape is rectangular and a resist pattern having excellent dimensional fidelity is provided.
申请公布号 US2002177081(A1) 申请公布日期 2002.11.28
申请号 US20020098173 申请日期 2002.03.15
申请人 ABE NOBUNORI;OZAWA KAKUEI 发明人 ABE NOBUNORI;OZAWA KAKUEI
分类号 G03F7/11;(IPC1-7):G03F7/00 主分类号 G03F7/11
代理机构 代理人
主权项
地址