发明名称 VERTICAL METAL OXIDE SILICON FIELD EFFECT SEMICONDUCTOR DIODES
摘要 The semiconductor diodes are diode configured vertical metal oxide semiconductor field effect devices formed using semiconductor pedestals (304) and having one diode terminal (324) as the common connection between the gates (318) and drains (312) of the vertical metal oxide semiconductor field effect devices, and one diode terminal (330) as the common connection with the sources (314) of the vertical metal oxide semiconductor field effect devices. Methods of manufacturing the vertical metal oxide seminconductor field effect devices are also disclosed.
申请公布号 WO02095835(A2) 申请公布日期 2002.11.28
申请号 WO2002US14848 申请日期 2002.05.08
申请人 VRAM TECHNOLOGIES, LLC;METZLER, RICHARD, A. 发明人 METZLER, RICHARD, A.
分类号 H01L29/866;H01L21/329;H01L21/336;H01L27/08;H01L29/78;H01L29/861 主分类号 H01L29/866
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