| 摘要 |
<p>The storage capacitor of an active matrix liquid crystal display is formed to have a second electrode (28) that laterally overlaps a first electrode (10). The drain (30) of a thin film transistor extends across the gate electrode (2). The gate electrode (2) and the first electrode (10) of the storage capacitor are formed from a single metallisation layer. The width of the gate electrode (2) and the first electrode (10) will tend to vary in parallel, as a result of process variation. This parallel variation tends to cancel out subsequent variation in the kick back voltage.</p> |
