POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the number of masks by forming a plurality of layers made of the same material on the same layer and further forming contact holes and via holes simultaneously in a polycrystalline silicon thin film transistor for a liquid crystal display device. SOLUTION: An active pattern 104 and a gate insulating film 106 are formed on a transparent substrate 100. On the gate insulating film 106, there formed: a gate electrode 108a which crosses the active pattern 104 and defines a source region 105S/drain region 105D and a channel region 105C, and an insulating interlayer film 110. On the insulating interlayer film 110, there are formed: data wiring 114a connected with drain region 105D through a first contact hole 112a on the drain region 105D, and a pixel electrode 114b formed on the same layer as data wiring 114a and connected with the source region 105S through a second contact hole 112b on source region 105S.