SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting device of long life, in which a retaining substrate containing Al is used as the constituent element. SOLUTION: The retaining substrate composed of first semiconductor material which contains Al as the constituent element is prepared and exposed to an atmosphere for etching oxide in the first semiconductor material. A first layer composed of second semiconductor material is epitaxially grown on the surface of the retaining substrate. A light emitting layer composed of third semiconductor material whose band gap is smaller than that of the second semiconductor material is epitaxially grown on the first layer. A second layer composed of fourth semiconductor material whose band gap is greater than that of the third semiconductor material is epitaxially grown on the light emitting layer.