发明名称 |
SOI device and method of fabricating the same |
摘要 |
Disclosed are an SOI device having no edge leakage current and a method of fabricating the same. The SOI device comprises: an SOI substrate of a stack structure of a base substrate, a buried oxide layer and a semiconductor layer; an oxide layer formed to be in contact with the buried oxide layer at the semiconductor layer portion corresponding to a field region so that an active region is defined; a gate electrode pattern having a gate oxide layer, the gate oxide layer only formed on the active region; a source region and a drain region formed inside the active region of the semiconductor layer of both sides of the gate electrode pattern; and a gate electrode line formed on the gate electrode pattern and on the field region so as to interconnect the gate electrode patterns of the respective active regions arranged in a line.
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申请公布号 |
US6479865(B1) |
申请公布日期 |
2002.11.12 |
申请号 |
US20000595107 |
申请日期 |
2000.06.16 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE WON CHANG;LEE WOO HAN |
分类号 |
H01L21/762;H01L21/336;H01L21/34;H01L29/786;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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